Elasto-thermodiffusive (ETNP) surface waves in semiconductor materials
نویسندگان
چکیده
منابع مشابه
Elasto-Thermodiffusive Response in a Two-Dimensional Transversely Isotropic Medium
The present article investigates the elasto-thermodiffusive interactions in a transversely isotropic elastic medium in the context of thermoelasticity with one relaxation time parameter and two relation time parameters. The resulting non-dimensional coupled equations are applied to a specific problem of a half-space in which the surface is free of tractions and is subjected to time-dependent th...
متن کاملNonlinear surface waves in left-handed materials.
We study both linear and nonlinear surface waves localized at the interface separating a left-handed (LH) medium (i.e., a medium with both negative dielectric permittivity and negative magnetic permeability) and a conventional [or right-handed (RH)] dielectric medium. We demonstrate that the interface can support both TE- and TM-polarized surface waves-surface polaritons, and we study their pro...
متن کاملNon-Linear Surface Waves At a Single Interface of Semimagnetic Semiconductor – Left Handed Materials (LHM)
The nonlinear characteristics of TE surface waves at microwave frequencies in a layered structure of non-linear semimagneticsemiconductor cover and left-handed material substrate have been investigated. Numerical analysis and derivation were carried out for the dispersion relation in its general form. The power flow has also been studied as a function of wave number for different frequencies an...
متن کاملSemiconductor Materials :-
The label semiconductor itself provides a hint as to its characteristics. The prefix semis normally applied to a range of levels midway between two limits. The term conductor is applied to any material that will support a generous flow of charge when a voltage source of limited magnitude is applied across its terminals. An insulator is a material that offers a very low level of conductivity und...
متن کاملMicrocavities in Semiconductor Materials
Positron beam and helium desorption techniques have been applied to different materials, in particular semiconductor materials, to determine the presence of defects. The positron technique yields values of the positron diffusion length and values of the Doppler broadening parameters. In principle, defect concentrations can be derived and an indication can be obtained about the nature of the def...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Solids and Structures
سال: 2009
ISSN: 0020-7683
DOI: 10.1016/j.ijsolstr.2009.01.019